TS7988, Elektronika, TRANZYSTORY
[ Pobierz całość w formacie PDF ]Ordering number :EN5959
NPN Triple Diffused Planar Silicon Transistor
TS7988
Ultrahigh-Definition CRT Display
Horizontal Deflection Output Applications
Features
• High speed.
• High breakdown voltage (V
CBO
=1600V).
• High reliability (Adoption of HVP process).
• Adoption of MBIT process.
Package Dimensions
unit:mm
2039D-TO3PML
[TS7988]
16.0
ø
3.4
5.6
3.1
2.8
2.0
2.0
1.0
0.6
123
1:Base
2:Collector
3:Emitter
SANYO:TO-3PML
5.45
5.45
Specifications
Absolute Maximum Ratings
at Ta = 25˚C
P
S
C
R
U
C
V
V
C
1
V
C
V
V
C
8
V
E
V
V
E
6V
C
C
I
C
1
A
C
C
(
I
C
2
A
C
D
P
C
3
W
T
C
7
W
J
T
T
1
˚C
S
T
T
–
t
+
˚C
Electrical Characteristics
at Ta = 25˚C
P
S
C
R
U
m
t
m
C
C
C
I
C
V
C
=
I
E
=
1
µ
C
C
C
I
C
V
C
=
R
B
=
1
m
C
S
V
V
C
I
C
=
I
B
=
8
V
E
C
C
I
E
V
E
=
I
C
=
1
m
D
C
G
h
F
V
C
=
I
C
=
1
3
h
F
V
C
=
I
C
=
4
7
C
S
V
V
C
I
C
=
B
=
5
V
B
S
V
V
B
I
C
=
B
=
1
V
S
T
t
s
I
C
=
B
=
B
=
3
µ
F
T
t
f
I
C
=
B
=
B
=
0
µ
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
42498TS (KOTO) TA-1619 No.5959-1/3
I
I
I
I
I
I
TS7988
Switching Time Test Circuit
PW=20
µ
s
I
B1
DC
£
1%
I
B2
OUTPUT
INPUT
R
B
R
L
=33.3
W
V
R
50
W
+
+
100
µ
F
470
µ
F
V
BE
=–2V
V
CC
=200V
10
I
C
- V
CE
10
I
C
- V
BE
V
CE
=5V
9
9
8
8
7
7
6
6
5
5
4
4
3
3
2
2
1
1
0
0
1
2
3
4
5
6
7
8
9
10
0
0
0.2
0.4
0.6
0.8
1.0
1.2
Collector-to-Emitter Voltage, V
CE
–V
Base-to-Emitter Voltage, V
BE
–V
100
h
FE
- I
C
10
V
CE
(
sat
)
- I
C
V
CE
=5V
I
C
/
I
B
=5
7
7
5
5
Ta=12
0˚C
3
2
3
2
1.0
7
5
10
3
7
2
5
0.1
Ta=–40˚C
7
3
5
2
3
2
1.0
0.01
0.1
2
3
5 7
1.0
2
3
5 7
10
0.1
2
3
5 7
1.0
2
3
5 7
10
Collector Current, I
C
– A
Collector Current, I
C
–A
7
SW Time - I
C
10
SW Time - I
B2
5
7
5
3
2
3
2
1.0
1.0
7
7
5
5
3
3
2
2
0.1
V
CC
= 200V, R
load
I
C
/
I
B1
=6, I
B2
/
I
B1
=2.5
0.1
V
CC
= 200V, R
load
I
C
=6A, I
B1
=1A
7
7
7
0.1
2
357
1.0
2
3
5 7
10
2
7
0.1
2
3
5 7
1.0
2
3
5 7
10
Collector Current, I
C
–A
Base Current, I
B2
–A
No.5959-2/3
TS7988
5
Forward Bias A S O
5
Reverse Bias A S O
3
I
CP
3
2
I
C
2
10
7
10
5
7
3
5
2
3
1.0
2
7
5
3
1.0
2
7
5
0.1
3
H
I
B2=
–3A
Tc=25˚C
1pulse
µ
7
5
Tc=25˚C
1pulse
2
3
0.1
357
10
2
357
100
2
357
1000
3
5 7
100
2
3
5 7
1000
2
3
Collector-to-Emitter Voltage, V
CE
– V
Collector-to-Emitter Voltage, V
CE
–V
4.0
P
C
- Ta
80
P
C
- Tc
70
3.0
60
50
2.0
40
30
1.0
20
10
0
0
20
40
60
8 0
100
120
140
160
0
0
20
40
60
8 0
100
120
140
160
Ambient Temperature, Ta – ˚C
Case Temperature, Tc – ˚C
No products described or contained herein are intended for use in surgical implants, life-support systems,
aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and
the like, the failure of which may directly or indirectly cause injury, death or property loss.
Anyone purchasing any products described or contained herein for an above-mentioned use shall:
Accept full responsibility and indemnify and defend SANYO ELECTRIC CO., LTD., its affiliates,
subsidiaries and distributors and all their officers and employees, jointly and severally, against any
and all claims and litigation and all damages, cost and expenses associated with such use:
Not impose any responsibilty for any fault or negligence which may be cited in any such claim or
litigation on SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors or any of
their officers and employees jointly or severally.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guarant-
eed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees
are made or implied regarding its use or any infringements of intellectual property rights or other rights of
third parties.
This catalog provides information as of April, 1998. Specifications and information herein are subject to
change without notice.
PS No.5959-3/3
L=500
2
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