TS512, ukł scalone T
[ Pobierz całość w formacie PDF ]TS512,A
HIGH SPEED PRECISION
DUAL OPERATIONAL AMPLIFIERS
.
LOW OFFSET VOLTAGE : 500
m
V max.
.
SHORT CIRCUIT PROTECTION
.
LOW DISTORTION, LOW NOISE
.
HIGH GAIN-BANDWIDTH PRODUCT
.
HIGH CHANNEL SEPARATION
.
ESD INTERNAL PROTECTION
.
MACROMODEL
INCLUDED IN THIS
SPECIFICATION
N
DIP8
(Plastic Package)
D
SO8
(Plastic Micropackage)
DESCRIPTION
The TS512 is a high performance dual operational
amplifier with frequency and phase compensation
built into the chip. The internal phase compensation
allows stable operation as voltage follower in spite
of its high gain-bandwidth products.
The circuit presents very stable electrical charac-
teristics over the entire supply voltage range, and
is particularlyintended for professional and telecom
applications (active filter, etc).
ORDER CODES
Part Number
Temperature Range
Package
ND
TS512I
-40, +125
o
C
•
•
TS512AI
-40, +125
o
C
•
•
PIN CONNECTIONS
(top view)
Output 1
1
8
CC
+
Inve rting Input 1
2
-
7
Output
No n-inve rting Input 1
3
+
-
6
Inve rting Input 2
CC
-
4
+
5
No n-inve rting Input 2
March 1998
.
LOW POWER CONSUMPTION
V
V
TS512,A
SCHEMATIC DIAGRAM
(1/2 TS512)
Inverting
inpu t
Non-inve rting
input
8
D6
D7
R1
R2
R3
R4
Q1
Q2
Q13
Q5
Q6
Q4
Q3
D1
R5
Q12
Q14
Q7
Q9
R6
Output
D2
Q8
Q10
Q11
R7
Q18
C1
Q17
Q19
Q15
Q16
D3
Q23
D5
Q21
Q22
C2
Q20
D4
R8
R9
R10
4
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
V
CC
Supply Voltage
±
18
V
V
i
Input Voltage
±
V
CC
V
id
Differential Input Voltage
±
(V
CC
-1)
T
oper
Operating Free Air Temperature Range
-40 to +125
o
C
P
to t
Power Dissipation at T
amb
=70
o
C
500
mW
T
j
Junction Temperature
150
o
C
T
stg
Storage Temperature Range
-65 to +150
o
C
2/7
TS512,A
ELECTRICAL CHARACTERISTICS
(V
CC
=
±
15V, T
amb
=
25
o
C, unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
CC
Supply Current
0.7
1.2
mA
I
ib
Input Bias Current
50
150
nA
T
min.
<T
op
<T
max
.
300
nA
R
i
Input Resistance
f = 1kHz
1
M
W
V
io
Input Offset Voltage
TS512
TS512A
0.5
2.5
0.5
mV
T
min
.<T
op
<T
max
.
TS512
TS512A
3.5
1.5
mV
DV
io
Input Offset Voltage Drift
T
min
.<T
op
<T
max
.
2
m
V/
o
C
I
io
Input Offset Current
5
20
nA
T
min
.<T
op
<T
max
.
40
nA
DI
io
Input Offset Current Drift
T
min
.<T
op
<T
max
.
0.08
nA
°
C
I
os
Output Short Circuit Current
23
mA
A
vd
Large Signal Voltage Gain
R
L
=2k
V
CC
=
±
15V
90
100
95
dB
V
CC
=
±
4V
GBP
Gain-bandwidth Product
f = 100kHz
1.8
3
MHz
e
n
Equivalent Input Noise Voltage
f = 1kHz
R
s
=50
nV
/
``
Hz
W
R
s
=1k
8
10
18
15
W
R
s
= 10k
W
THD
Total Harmonic Distortion
A
V
= 20dB
R
L
=2k
W
0.03
0.1
%
V
O
=2V
PP
f = 1kHz
±
V
opp
Output Voltage Swing
R
L
=2k
V
CC
=
±
15V
±
13
V
V
CC
=
±
4V
±
3
V
opp
Large Signal Voltage Swing
R
L
= 10k
W
f = 10kHz
28
V
PP
SR
Slew Rate
Unity Gain, R
L
=2k
W
0.8
1.5
V/
m
s
CMR
Common Mode Rejection Ratio
V
ic
= 10V
90
dB
SVR
Supply Voltage Rejection Ratio
V
ic
= 1V
f = 100Hz
90
dB
V
O1
/V
O2
Channel Separation
f = 1kHz
100
120
dB
3/7
W
W
TS512,A
.
LOW OFFSET VOLTAGE : 500
m
V max.
.
HIGH GAIN-BANDWIDTH PRODUCT
Applies to : TS512I,AI
** Standard Linear Ics Macromodels, 1993.
** CONNECTIONS :
* 1 INVERTING INPUT
* 2 NON-INVERTING INPUT
* 3 OUTPUT
* 4 POSITIV E POWER SUPPLY
* 5 NEGATIVE POWER SUPPLY
FIBN 5 1 VOFP 1.000000E-02
* AMPLIFYING STAGE
FIP 5 19 VOFP 9.000000E+02
FIN 5 19 VOFN 9.000000E+02
RG1 19 5 1.727221E+06
RG2 19 4 1.727221E+06
CC 19 5 6.000000E-09
DOPM 19 22 MDTH 400E-12
DONM 21 19 MDTH 400E-12
HOPM 22 28 VOUT 6.521739E+03
VIPM 28 4 1.500000E+02
HONM 21 27 VOUT 6.521739E+03
VINM 5 27 1.500000E+02
GCOMP 5 4 4 5 6.485084E-04
RPM1 5 80 1E+06
RPM2 4 80 1E+06
GAVPH 5 82 19 80 2.59E-03
RAVPHGH 82 4 771
RAVPHGB 82 5 771
RAVPHDH 82 83 1000
RAVPHDB 82 84 1000
CAVPHH 4 83 0.331E-09
CAVPHB 5 84 0.331E-09
EOUT 26 23 82 5 1
VOUT 23 5 0
ROUT 26 3 6.498455E+01
COUT 3 5 1.000000E-12
DOP 19 25 MDTH 400E-12
VOP 4 25 1.742230E+00
DON 24 19 MDTH 400E-12
VON 24 5 1.742230E+00
.ENDS
.SUBCKT TS512 1 3 2 4 5 (analog)
**********************************************************
.MODEL MDTH D IS=1E-8 KF=6.565195E-17 CJO=10F
* INPUT STAGE
CIP 2 5 1.000000E-12
CIN 1 5 1.000000E-12
EIP 10 5 2 5 1
EIN 16 5 1 5 1
RIP 10 11 2.600000E+01
RIN 15 16 2.600000E+01
RIS 11 15 1.061852E+02
DIP 11 12 MDTH 400E-12
DIN 15 14 MDTH 400E-12
VOFP 12 13 DC 0
VOFN 13 14 DC 0
IPOL 13 5 1.000000E-05
CPS 11 15 12.47E-10
DINN 17 13 MDTH 400E-12
VIN 17 5 1.500000e+00
DINR 15 18 MDTH 400E-12
VIP 4 18 1.500000E+00
FCP 4 5 VOFP 3.400000E+01
FCN 5 4 VOFN 3.400000E+01
FIBP 2 5 VOFN 1.000000E-02
4/7
.
LOW POWER CONSUMPTION
.
LOW DISTORTION, LOW NOISE
.
SHORT CIRCUIT PROTECTION
.
HIGH CHANNEL SEPARATION
TS512,A
ELECTRICAL CHARACTERISTICS
V
CC
=
±
15V
,
T
amb
=25
o
C (unless otherwise specified)
Symbol
Conditions
Value
Unit
V
io
0
mV
A
vd
R
L
=2k
W
100
V/mV
I
CC
No load, per operator
350
m
A
V
icm
-13.5 to 13.5
V
V
OH
R
L
=2k
W
+13
V
V
OL
R
L
=2k
W
-13
V
I
sink
V
O
=0V
23
mA
I
source
V
O
=0V
23
mA
GBP
R
L
=2k
W,
C
L
= 100pF
3
MHz
SR
R
L
=2k
W
1.4
V/ms
j
m
R
L
=2k
W,
C
L
= 100pF
55
Degrees
5/7
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